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Preparation, structure and electrical properties of epitaxial films of Ga2O3 on sapphire substrates

✍ Scribed by G.V. Chaplygin; S.A. Semiletov

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
327 KB
Volume
32
Category
Article
ISSN
0040-6090

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A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87