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Structural and electrical properties of CuGaSe2 thin films on GaAs substrates

✍ Scribed by Dr. B. Schumann; Dr. A. Tempel; Doz. Dr. sc. G. Kühn; Doz. Dr. sc. H. Neumann; Dr. Nguyen Yan Nam; Dr. T. Hänsel


Publisher
John Wiley and Sons
Year
1978
Tongue
English
Weight
550 KB
Volume
13
Category
Article
ISSN
0232-1300

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A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87

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## Abstract Transparent Zinc Oxide (ZnO) thin films have been grown on Si (100) and Sapphire (0001) substrates by RF magnetron sputtering for different growth time intervals (10, 30 and 60 min) to study the substrate and thickness effects. All the films have been grown at a substrate temperature of