Structural and electrical properties of CdS thin films evaporated onto GaAs substrates
✍ Scribed by Dr. B. Schumann; Doz. Dr. sc. G. Kühn; Dr. A. Tempel; Doz. Dr. sc. H. Neumann; A. Müller; Dr. sc. G. Leonhardt
- Publisher
- John Wiley and Sons
- Year
- 1980
- Tongue
- English
- Weight
- 347 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0232-1300
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## Abstract CdS thin films of varying thicknesses were deposited on cleaned glass substrates at room temperature by thermal evaporation technique in a vacuum of about 2 x 10^‐5^ torr. UV‐VIS spectra of the films were studied using the optical transmittance measurements which were taken in the spect
## Abstract CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperat
A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87