CdSe:In films were prepared by electron beam evaporation technique using CdSe and In 2 Se 3 (purity ~99.9%) pellets. The crystal structure of the films with and without Indium, measured by X-ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to hig
Structural, optical, and electrical properties of electron beam evaporated CdSe thin films
β Scribed by M. G. Syed Basheer Ahamed; A. R. Balu; V. S. Nagarethinam; A. Thayumanavan; K. R. Murali; C. Sanjeeviraja; M. Jayachandran
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 158 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 Β°C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm^β1^ and 625 cm^β1^respectively. (Β© 2010 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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