## Abstract CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 Β°C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperat
Structural, optical and photoconductive properties of electron beam evaporated CdSxSe1-x films
β Scribed by K. Sivaramamoorthy; S. Asath Bahadur; M. Kottaisamy; K. R. Murali
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 181 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
Abstract
CdS~x~Se~1βx~ films were deposited by the electron beam evaporation technique on glass substrates at different temperatures in the range 30 β 300 Β°C using the laboratory synthesized powders of different composition. The films exhibited hexagonal structure and the lattice parameters shifted from CdSe to CdS side as the composition changed from CdSe to CdS side. The bandgap of the films increased from 1.68 to 2.41 eV as the concentration of CdS increased. The rootβmeanβroughness (RMS) values are 3.4, 2.6, 1.2 and 0.6 nm as the composition of the films shifted towards CdS side. The conductivity varies from 30 Ξ©cm^β1^ to 480 Ξ©cm^β1^ as the βxβ value increases from 0 to 1. The films exhibited photosensitivity. The PL spectrum shifts towards lower energies with decreasing x, due to the decrease of the fundamental gap with Se composition. (Β© 2010 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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