## Abstract CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 Β°C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperat
Structural, optical, electrical and luminescence properties of electron beam evaporated CdSe:In films
β Scribed by M. G. Syed Ahamed Basheer; K. S. Rajni; V. S. Vidhya; V. Swaminathan; A. Thayumanavan; K. R. Murali; M. Jayachandran
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 179 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
CdSe:In films were prepared by electron beam evaporation technique using CdSe and In 2 Se 3 (purity ~99.9%) pellets. The crystal structure of the films with and without Indium, measured by X-ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X-ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se 3d 5/2 ), 444 eV (In 3d 5/2 ), 411 eV (Cd 3d 3/2 ), (Cd 3d 5/2 ). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10 -3 β¦cm. Carrier density was in the range of 10 21 cm -3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases.
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