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Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates

✍ Scribed by B. Bolliger; M. Erbudak; M. Hong; J. Kwo; A. R. Kortan; J. P. Mannaerts


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
291 KB
Volume
30
Category
Article
ISSN
0142-2421

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Characterization of epitaxial group II f
✍ Dr. R. Flagmeyer; Dr. B. Schumann πŸ“‚ Article πŸ“… 1987 πŸ› John Wiley and Sons 🌐 English βš– 539 KB

Lattice matched (Ca, Sr)F, and related fluoride films grown on (100)GaAs substrates were investigated by Rutherford backscattering/Channeling. This technique allows the characterization of the 30-250 nm thick heteroepitaxial layers with respect to chemical composition, film thickness, interface roug