✦ LIBER ✦

Structural investigations of CuInSe2 epitaxial layers on {110}- and {100}-oriented GaAs Substrates

✍ Scribed by A. Tempel; B. Schumann; K. Kolb; G. Kühn

Publisher: Elsevier Science
Year: 1981
Tongue: English
Weight: 446 KB
Volume: 54
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(81)90509-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Influence of substrate orientation on th

Influence of substrate orientation on the electrical properties of CuInSe2 epitaxial layers on GaAs substrates

✍ Doz. Dr. sc. H. Neumann; Dipl.-Phys. E. Nowak 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 400 KB 👁 2 views

Investigations of LiInSe2 Epitaxial Laye

Investigations of LiInSe2 Epitaxial Layers on {100}- and {110}-oriented Substrates with Sphalerite Structure by Means of RHEED

✍ Dr. A. Tempel; Dr. B. Schumann; Dr. S. Mitaray; Prof. Dr. G. Kühn 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 951 KB

Influence of Substrate Surface Polarity

Influence of Substrate Surface Polarity on Epitaxial Layer Growth of CuInSe2 on GaAs

✍ Dr. B. Schumann; Doz.Dr.sc. H. Neumann; E. Nowak; Doz. Dr. sc. G. Kühn 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 399 KB 👁 2 views

Structural and electrical properties of

Structural and electrical properties of CuIn0.7Ga0.3Se2 epitaxial layers on GaAs substrates

✍ Dr. B. Schumann; Doz. Dr. sc. H. Neumann; Dr. A. Tempel; Doz. Dr. sc. G. Kühn; E 📂 Article 📅 1980 🏛 John Wiley and Sons 🌐 English ⚖ 393 KB 👁 2 views

Stripe-shaped facetted morphology and do

Stripe-shaped facetted morphology and domain structure of epitaxial CeO2(110) layers on Si(100) substrates

✍ Tomoyasu Inoue; Tetsu Ohsuna; Yasuhiro Obara; Yasuhiro Yamamoto; Masataka Satoh; 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 545 KB

Growth and Electron Microscopical Invest

Growth and Electron Microscopical Investigations of (CaBa)F2 Epitaxial Layers on GaAs and InP Substrates

✍ Dr. B. Schumann; Prof. Dr. sc. nat. G. Kühn; Dr. G. Wagner 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 668 KB

Growth and Electron Microscopical Investigations of (CaBa)Fs Epitaxial Layers on GaAs and InP Substrates (CaBa)Fa layers have been grown on (100)-oriented GaAs and I n P substrates by flash evaporation technique. They were investigated by means of electron microscopical methods (RHEED, TED, TEM). Ep