Point defect generation in SiO2 by interaction with SiO at elevated temperatures

✍ Scribed by A. Stesmans; V.V. Afanas'ev

• Book ID: 104306422
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 302 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00048-8

✦ Synopsis

The interaction of fused silica (SiO2) with gaseous SiO during annealing at ~1140 °C has been studied by electron spin resonance (ESR). In contrast with annealing in vacuum, this results in the generation of an isotropic defect in SiO2 of g=2.0028 and peak-to-peak width 3.6-6 G. These spectroscopic properties are similar to those of the signal found generated in the oxide layer of standard thermal Si/SiO2 structures upon postoxidation annealing in vacuum at ~ 960 °C, assigned to S centers, tentatively ascribed previously to E'-like defects of the type O2Si---Si* or OSi2~Si*. An attendant observation is enhanced sensitivity of the SiO2 network to photogeneration (VUV) of E'v defects (O-vacancy center O3-ffiSi,,). The results suggest that interaction of interface generated SiO with the SiO2 network may explain the degradation of the thermal Si/SiO2 structure during postoxidation annealing in vacuum.