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Strengthening sapphire at elevated temperatures by SiO2 films

โœ Scribed by Li-Ping Feng; Zheng-Tang Liu; Qiang Li

Book ID
108060135
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
383 KB
Volume
253
Category
Article
ISSN
0169-4332

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The interaction of fused silica (SiO2) with gaseous SiO during annealing at ~1140 ยฐC has been studied by electron spin resonance (ESR). In contrast with annealing in vacuum, this results in the generation of an isotropic defect in SiO2 of g=2.0028 and peak-to-peak width 3.6-6 G. These spectroscopic

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R ECENTLY sapphire has found increased applications as a window material for the transmission of visible and in frared radiant energy. The material has been used for windows in absorption cells, light sources, detectors, and domes of aircraft. Its popularity is due mainly to its relatively high tran