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D.c conduction in sio2films at elevated temperatures

✍ Scribed by N. J. Chou

Book ID
112817265
Publisher
Springer US
Year
1972
Tongue
English
Weight
220 KB
Volume
1
Category
Article
ISSN
0361-5235

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πŸ“œ SIMILAR VOLUMES

Point defect generation in SiO2 by inter
Point defect generation in SiO2 by interaction with SiO at elevated temperatures
✍ A. Stesmans; V.V. Afanas'ev πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 302 KB

The interaction of fused silica (SiO2) with gaseous SiO during annealing at ~1140 Β°C has been studied by electron spin resonance (ESR). In contrast with annealing in vacuum, this results in the generation of an isotropic defect in SiO2 of g=2.0028 and peak-to-peak width 3.6-6 G. These spectroscopic