Point defect generation in SiO2 by inter
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A. Stesmans; V.V. Afanas'ev
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Article
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1997
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Elsevier Science
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English
⚖ 302 KB
The interaction of fused silica (SiO2) with gaseous SiO during annealing at ~1140 °C has been studied by electron spin resonance (ESR). In contrast with annealing in vacuum, this results in the generation of an isotropic defect in SiO2 of g=2.0028 and peak-to-peak width 3.6-6 G. These spectroscopic