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Oxygen interaction with defects at the Si/SiO2 interface

✍ Scribed by J.H. Stathis; S. Rigo; I. Trimaille


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
194 KB
Volume
79
Category
Article
ISSN
0038-1098

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On the segregation of Ca at SiO2/Si inte
✍ Deenapanray, Prakash N. K.; Petravic, Mladen πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 128 KB

Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac