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Silicide formation at low temperatures by metal-SiO2 interaction

✍ Scribed by Kräutle, H. ;Nicolet, M.-A. ;Mayer, J. W.

Book ID
105369659
Publisher
John Wiley and Sons
Year
1973
Tongue
English
Weight
215 KB
Volume
20
Category
Article
ISSN
0031-8965

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Point defect generation in SiO2 by inter
Point defect generation in SiO2 by interaction with SiO at elevated temperatures
✍ A. Stesmans; V.V. Afanas'ev 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 302 KB

The interaction of fused silica (SiO2) with gaseous SiO during annealing at ~1140 °C has been studied by electron spin resonance (ESR). In contrast with annealing in vacuum, this results in the generation of an isotropic defect in SiO2 of g=2.0028 and peak-to-peak width 3.6-6 G. These spectroscopic