There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox
โฆ LIBER โฆ
Plasma etching of HfO2 in metal gate CMOS devices
โ Scribed by E. Sungauer; X. Mellhaoui; E. Pargon; O. Joubert
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 595 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0167-9317
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