Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate-last CMOS and MIM Devices

✍ Scribed by Mindaugas Lukosius; Christian Wenger; Sergej Pasko; Hans-Joachim Müssig; Bernhard Seitzinger; Christoph Lohe

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 185 KB
• Volume: 14
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200806695

✦ Synopsis

Abstract

Pure and diluted Ti[N(Et)~2~]~4~ precursors are used to grow TiN layers at 400–600 °C by using atomic vapor deposition (AVD®). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7 eV indicates the possibility of using AVD®‐grown TiN as a metal gate electrode for PMOSFET and metal‐insulator‐metal (MIM) devices. TiN/HfO~2~/SiO~2~ stacks are integrated into gate‐last PMOS transistors, and the extracted parameters are compared to poly‐Si/SiO~2~ reference transistors. The optimized films grown at 400 °C with a thickness of 20 nm exhibit a resistivity of 400 µΩ cm.