Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

✍ Scribed by H.-H Tseng; J Veteran; P.J Tobin; J Mogab; P.G.Y Tsui; V Wang; M Khare; X.W Wang; T.P Ma; C Hobbs; R Hegde; M Hartig; G Kenig; R Blumenthal; R Cotton; V Kaushik; T Tamagawa; B.L Halpern; G.J Cui; J.J Schmitt

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 435 KB
• Volume: 3
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(99)00024-4