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Physical mechanisms on the abnormal gate-leakage currents in pseudomorphic high electron mobility transistors

✍ Scribed by Cho, S.D.; Kim, H.T.; Kim, D.M.

Book ID: 114617067
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 420 KB
Volume: 50
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2003.812493

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