✦ LIBER ✦

Photoassisted high-frequency capacitance-voltage characterization of the Si[sub 3]N[sub 4]/GaN interface

✍ Scribed by Swenson, B. L.; Mishra, U. K.

Book ID: 121699252
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 741 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3224852

No coin nor oath required. For personal study only.

✦ Synopsis

A revised method to measure the interface state density of Si3N4/GaN metal-insulator-semiconductor diodes is reported. The wide band gap of GaN suppresses hole generation at room temperature and consequently allows measurements in deep depletion. Using the method outlined in this paper, the total interface state density can be measured throughout the bandgap above the bias in deep depletion utilizing an above bandgap light source. We report a peak interface state density of 5.0×1012 cm−2 eV−1 at ∼0.3 eV using this procedure, whereas the Terman method reports a peak of <2×1011 cm−2 eV−1 for the same Si3N4/GaN metal-insulator-semiconductor diode without illumination.

📜 SIMILAR VOLUMES

Photoassisted high-frequency capacitance

Photoassisted high-frequency capacitance-voltage characterization of the Si[sub 3]N[sub 4]/GaN interface

✍ Swenson, B. L.; Mishra, U. K. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 741 KB

Investigations of SiO[sub 2]/n-GaN and S

Investigations of SiO[sub 2]/n-GaN and Si[sub 3]N[sub 4]/n-GaN insulatorâsemiconductor interfaces with low interface state density

✍ Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.; Umeno, M. 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 262 KB

Excess silicon at the Si[sub 3]N[sub 4]/

Excess silicon at the Si[sub 3]N[sub 4]/SiO[sub 2] interface

✍ V. A. Gritsenko; I. P. Petrenko; S. N. Svitasheva; H. Wong 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 329 KB

Surface passivation effects on AlGaN/GaN

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO[sub 2], Si[sub 3]N[sub 4], and silicon oxynitride

✍ S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo; Y. Sano 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 449 KB

Improvement of AlGaNâGaN high electron

Improvement of AlGaNâGaN high electron mobility transistor structures by in situ deposition of a Si[sub 3]N[sub 4] surface layer

✍ Derluyn, J.; Boeykens, S.; Cheng, K.; Vandersmissen, R.; Das, J.; Ruythooren, W. 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 428 KB

Fabrication and characterization of high

Fabrication and characterization of high-quality uniform and apodized Si/sub 3/N/sub 4/ waveguide gratings using laser interference lithography

✍ Hopman, W.C.L.; Dekker, R.; Yudistira, D.; Engbers, W.F.A.; Hoekstra, H.J.W.M.; 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 729 KB