Photoassisted high-frequency capacitance
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Swenson, B. L.; Mishra, U. K.
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Article
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2009
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American Institute of Physics
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English
⚖ 741 KB
A revised method to measure the interface state density of Si3N4/GaN metal-insulator-semiconductor diodes is reported. The wide band gap of GaN suppresses hole generation at room temperature and consequently allows measurements in deep depletion. Using the method outlined in this paper, the total in