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Investigations of SiO[sub 2]/n-GaN and Si[sub 3]N[sub 4]/n-GaN insulatorâsemiconductor interfaces with low interface state density

✍ Scribed by Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.; Umeno, M.

Book ID: 121482913
Publisher: American Institute of Physics
Year: 1998
Tongue: English
Weight: 262 KB
Volume: 73
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.122009

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