✦ LIBER ✦
Work-function difference between Al and n-GaN from Al-gated n-GaNânitrided-thin-Ga[sub 2]O[sub 3]âSiO[sub 2] metal oxide semiconductor structures
✍ Scribed by Bae, Choelhwyi; Krug, Cristiano; Lucovsky, Gerald; Chakraborty, Arpan; Mishra, Umesh
- Book ID
- 120067459
- Publisher
- American Institute of Physics
- Year
- 2004
- Tongue
- English
- Weight
- 358 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0003-6951
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