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Photoacoustic and photoluminescence studies of H+ion-implanted n-GaAs

✍ Scribed by Srinivasan, R. ;Sanjeeviraja, C. ;Ramachandran, K.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
122 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The surface of silicon‐doped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^–2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantation on GaAs:Si. The results are compared with Raman measurements. All the measurements confirm the sign change of charge carriers at a dose of 10^15^ cm^–2^. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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