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Photoacoustic and X-ray Studies on H+ Ion Implanted n-GaAs

✍ Scribed by S. D. D. Roy; N. Sankar; K. Ramachandran; P. Raji; T. S. Vivekanandan

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
272 KB
Volume
37
Category
Article
ISSN
0232-1300

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Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ— 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa