Defects in H implanted GaAs studied by ion-beam and low-energy positron techniques

✍ Scribed by J. Keinonen; E. Rauhala; J. Räisänen; K. Saarinen; P. Hautojärvi; C. Corbel

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 260 KB
• Volume: 170
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90129-3

✦ Synopsis

Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 × 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing was observed to be connected to the migration of implantation-induced defect-complexes. A huge increase in the displaced atom concentration in the region of the H concentration was observed after annealings. A monovacancy overlayer, dissociation of H-vacancy complexes, and formation of stable vacancy-H agglomerates were observed in the different parts of the slowing-down region of the implanted H.