The use of H2 and NH3 ion implantation in the passivation of defects in silicon ribbon grown by the ribbon-against-drop technique

✍ Scribed by E. Courcelle; J.C. Muller; P. Siffert; C. Belouet

• Publisher: Elsevier Science
• Year: 1985
• Weight: 472 KB
• Volume: 14
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(85)90038-9