The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus: V K Vasilev et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 247–250 (in Russian)

• Publisher: Elsevier Science
• Year: 1975
• Tongue: English
• Weight: 162 KB
• Volume: 25
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(75)91459-1