𝔖 Bobbio Scriptorium

✦ LIBER ✦

The influence of defects produced by ion bombardment on distribution and electrical activity of impurity atoms: V M Zelexvinskaya et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 235–238 (in Russian)

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 162 KB
Volume: 25
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(75)91466-9

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📜 SIMILAR VOLUMES

The influence of ion current density and

The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus: V K Vasilev et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 247–250 (in Russian)

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The influence of mechanical stresses cau

The influence of mechanical stresses caused by structural defects on band structure and carrier mobility in thin films of the BiTeSb system: M P Volotskiy et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 98–101 (in Russian)

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The influence of defects on volt-ampere

The influence of defects on volt-ampere characteristics of p-n junctions prepared by implantation of Cd ions into GaAs: A A Gavrilov et al, Struct Def in Semicon, Coll, Novosibirsk 1973, 288–290 (in Russian)

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