Photoluminescence and Raman studies of ZnS nanoparticles implanted with Cu+ ions
โ Scribed by S. Saravana Kumar; M. Abdul Khadar; S.K. Dhara; T.R. Ravindran; K.G.M. Nair
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 300 KB
- Volume
- 251
- Category
- Article
- ISSN
- 0168-583X
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โฆ Synopsis
In the present study ZnS nanoparticles were prepared through chemical route. The particle size was calculated from the XRD line broadening. Pressed pellets of nanostructured ZnS were implanted with Cu + ions at doses of 5 โข 10 14 , 1 โข 10 15 and 5 โข 10 15 ions/cm 2 . The photoluminescence and Raman spectra of as prepared and Cu + ion implanted samples were recorded. PL emission peaks were observed around 412 and 518 nm in as prepared and in samples with Cu + ions implanted at higher doses of 1 โข 10 15 and 5 โข 10 15 ions/cm 2 . PL spectra of samples implanted at a low dose of 5 โข 10 14 ions/cm 2 showed a peak around 490 nm instead of the peak at 518 nm. PL spectra of Cu + implanted samples showed a decrease in intensity and an increase in FWHM of the emission peaks with increase in the implantation dose. The Raman spectra of unimplanted and Cu + ion implanted samples of nanostructured ZnS showed LO mode and LOPC (L ร ) mode. The peak position of LOPC mode decreased with increase in implantation dose due to the passivation of free electrons by Cu + ions.
๐ SIMILAR VOLUMES
Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m ร2 , 10 17 ions m ร2 and 10 18 ions m ร2 , respectively and annealed at various temperatures up to 1000 ยฐC