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Photoluminescence study of GaAs implanted with 100 MeV 28Si ions

✍ Scribed by Y.P. Ali; A.M. Narsale; B.M. Arora

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
163 KB
Volume
247
Category
Article
ISSN
0168-583X

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✦ Synopsis

Damage in n-GaAs implanted with 100 MeV 28 Si ions has been investigated using low temperature (T $ 20 K) photoluminescence (PL) measurements on samples irradiated with fluences of 10 16 ions m Γ€2 , 10 17 ions m Γ€2 and 10 18 ions m Γ€2 , respectively and annealed at various temperatures up to 1000 Β°C. A dominant annealing stage is seen at 650 Β°C where the PL begins to recover. PL spectra reveal several features which vary with annealing temperature, fluence and depth. Assignments of the defect structures responsible for the emission peaks are suggested.

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