Photoluminescence studies of GaAs/AlGaAs single Quantum Well intermixed by Ga+ ion implantation
β Scribed by Na Sai; Bao-zhen Zheng; Ji-zong Xu; Peng-hua Zhang; Xiao-ping Yang; Zhong-ying Xu
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 390 KB
- Volume
- 98
- Category
- Article
- ISSN
- 0038-1098
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Magneto-photoluminescence (PL) experiments of very thin GaAs/Al 0.3 Ga 0.7 As quantum wells were performed in a magnetic field (B) of up to 20 T. It has been observed that the diamagnetic shift changes abruptly from Ξ² B 2 to Ξ± B around 5 T as B increases, and both Ξ± and Ξ² become larger as the well-w
We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show