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Photoluminescence and photoluminescence excitation of AlGaAs/GaAs quantum wells with growth-interrupted heterointerfaces grown by molecular beam epitaxy

✍ Scribed by H. Nakashima; T. Takeuchi; K. Inoue; T. Fukunaga; D. Bimberg; J. Christen

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 66 KB
Volume: 22
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0296

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✦ Synopsis

We have measured the photoluminescence (PL) and PL excitation (PLE) of AlGaAs/GaAs single quantum wells with growth-interrupted heterointerfaces. PLE shows the small Stokes shifts of less than 1 meV indicating the extremely flat heterointerfaces without microroughness. Photoluminescence spectra show four peaks originating from different monolayer terraces. These peaks exhibit a doublet splitting. We assigned this doublet to free excitons and excitons bound to neutral donors from the strong well width dependence of doublet splitting.

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