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Pentamethylcyclopentadienyl Disilane as a Novel Precursor for the CVD of Thin Silicon Films

✍ Scribed by A. Klipp; F. Hamelmann; G. Haindl; J. Hartwich; U. Kleineberg; P. Jutzi; U. Heinzmann


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
309 KB
Volume
6
Category
Article
ISSN
0948-1907

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Synthesis of New Liquid Mixed Sr–Ta and
✍ H. Kadokura; Y. Okuhara; M. Mitsuya; H. Funakubo πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 238 KB πŸ‘ 1 views

tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 Β΄10 Β±8 A cm Β±2 for an electric field strength of 2 MV cm Β±1 , and a breakdown voltage