Synthesis of New Liquid Mixed Sr–Ta and Sr–Nb Alkoxides as CVD Precursors for Metal Oxide Thin Films

✍ Scribed by H. Kadokura; Y. Okuhara; M. Mitsuya; H. Funakubo

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 238 KB
• Volume: 6
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/1521-3862(200010)6:5<225::aid-cvde225>3.0.co;2-9

✦ Synopsis

tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 ´10 ±8 A cm ±2 for an electric field strength of 2 MV cm ±1 , and a breakdown voltage of 3 MV cm ±1 . The dielectric constant was 22. Further optimization of the process could lead to tantalum oxide thin films with better electric properties. Investigation is in progress.

Experimental

The CVD experiment was carried out in a cold-wall low-pressure reactor with a base pressure of 1 ´10 ±5 torr. TBTDET was vaporized at 313 K using Ar flowing at 10 sccm as the carrier gas. The deposition of thin films on p-Si(100) was carried out at temperatures between 573 K and 873 K. With oxygen flowing at 200 sccm, the pressure during the deposition was maintained at 1 torr.