tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 Β΄10 Β±8 A cm Β±2 for an electric field strength of 2 MV cm Β±1 , and a breakdown voltage
β¦ LIBER β¦
Anhydrous Metal Nitrates as Volatile Single Source Precursors for the CVD of Metal Oxide Films
β Scribed by Daniel G. Colombo; David C. Gilmer; Victor G. Young Jr.; Stephen A. Campbell; Wayne L. Gladfelter
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 171 KB
- Volume
- 04
- Category
- Article
- ISSN
- 0948-1907
No coin nor oath required. For personal study only.
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Heterobimetallic [Ni(salen)Ln(hfa) 3 ] species [H 2 salen and derivative, by means of thermal analyses, and mass spectrometry using a Knudsen cell. The dissociation process Hhfa being N,NΠ-ethylenebis(salicylideneimine) and hexafluoroacetylacetone respectively], where Ni(salen) acts as a [Ni(salen)Y