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Passivation of Optically Black Silicon by Atomic Layer Deposited Al2O3

✍ Scribed by Otto, Martin; Kroll, Matthias; Käsebier, Thomas; Ziegler, Johannes; Sprafke, Alexander N.; Wehrspohn, Ralf B.


Book ID
123322273
Publisher
Elsevier
Year
2013
Weight
392 KB
Volume
38
Category
Article
ISSN
1876-6102

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Properties of Al2O3-films deposited on s
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A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i