✦ LIBER ✦

Surface Passivation Performance of Atomic-Layer-Deposited Al2O3 on p-type Silicon Substrates

✍ Scribed by Liu, Yanghui; Zhu, Liqiang; Guo, Liqiang; Zhang, Hongliang; Xiao, Hui

Book ID: 122316990
Publisher: Allerton Press Inc
Year: 2014
Tongue: English
Weight: 698 KB
Volume: 30
Category: Article
ISSN: 1005-0302
DOI: 10.1016/j.jmst.2013.12.005

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Silicon surface passivation by atomic la

Silicon surface passivation by atomic layer deposited Al[sub 2]O[sub 3]

✍ Hoex, B.; Schmidt, J.; Pohl, P.; van de Sanden, M. C. M.; Kessels, W. M. M. 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 1006 KB

Surface passivation of nano-textured sil

Surface passivation of nano-textured silicon solar cells by atomic layer deposited Al2O3 films

✍ Dou, Bingfei; Jia, Rui; Sun, Yun; Li, Haofeng; Chen, Chen; Jin, Zhi; Liu, Xinyu 📂 Article 📅 2013 🏛 American Institute of Physics 🌐 English ⚖ 781 KB

Atomic layer deposited Al2O3 passivation

Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors

✍ Salihoglu, Omer; Muti, Abdullah; Kutluer, Kutlu; Tansel, Tunay; Turan, Rasit; Ko 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 624 KB

Interface of atomic layer deposited Al2O

Interface of atomic layer deposited Al2O3on H-terminated silicon

✍ Gao, K. Y. ;Speck, F. ;Emtsev, K. ;Seyller, Th. ;Ley, L. ;Oswald, M. ;Hansch, W. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 559 KB

## Abstract Al~2~O~3~ films 1 to 20 nm thick were deposited as alternative high‐κ gate dielectric on hydrogen‐terminated silicon by Atomic Layer Deposition (ALD) and characterized by Synchrotron X‐ray Photoelectron Spec‐troscopy (SXPS), Fourier Transform Infrared (FTIR) absorption spectroscopy and

Role of surface fixed charge in the surf

Role of surface fixed charge in the surface passivation of thermal atomic layer deposited Al2O3on crystalline-Si

✍ Dou, Y. N.; He, Y.; Huang, C. Y.; Zhou, C. L.; Ma, X. G.; Chen, R.; Chu, J. H. 📂 Article 📅 2012 🏛 Springer 🌐 English ⚖ 439 KB

Properties of Al2O3-films deposited on s

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

✍ Per Ericsson; Stefan Bengtsson; Jarmo Skarp 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 293 KB

A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i