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Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

✍ Scribed by Repo, Päivikki; Haarahiltunen, Antti; Sainiemi, Lauri; Yli-Koski, Marko; Talvitie, Heli; Schubert, Martin C.; Savin, Hele


Book ID
120584382
Publisher
Institute of Electrical and Electronics Engineers
Year
2013
Tongue
English
Weight
577 KB
Volume
3
Category
Article
ISSN
2156-3381

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Photoluminescence (PL) intensity and carrier lifetime of TiN coated InGaAs/GaAs NSQW structures are used to indicate the passivation efficiency. Passivation film properties like thickness, mass density and interface roughness are studied by X-ray reflectivity measurements. It is shown that TiN not o