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Passivation of GaAs surface by atomic-layer-deposited titanium nitride

✍ Scribed by M. Bosund; A. Aierken; J. Tiilikainen; T. Hakkarainen; H. Lipsanen

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 793 KB
Volume: 254
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.02.070

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✦ Synopsis

Photoluminescence (PL) intensity and carrier lifetime of TiN coated InGaAs/GaAs NSQW structures are used to indicate the passivation efficiency. Passivation film properties like thickness, mass density and interface roughness are studied by X-ray reflectivity measurements. It is shown that TiN not only passivates but also protects the sample surface in the long run.

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