Atomic layer passivation of GaAs surfaces using InP related compounds
✍ Scribed by Dr. Kazumi Wada; Dr. Yoshinori Wada
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 288 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0935-9648
No coin nor oath required. For personal study only.
✦ Synopsis
Loss of carriers by recombination at surfaces and interfaces of GaAs not only degrades the characteristics of minority-carrier injection devices but also reduces the device lifetime. This has impeded the development of GaAs technology. Therefore, various attempts have been made to find surface passivation methods.
Recently, sulfide solution treatments have been reported:['% '] The deposition of a thin Na,S layer on the GaAs can enhance the photoluminescence (PL) intensity and the current gain of heterojunction bipolar transisters relative to those with untreated GaAs."] Treatment with (NH,),S, also results in an enhancement of performance.['] The Schottky barrier heights can be controlled on the (NH,),S,-treated GaAs surfaces. ['] These experiments indicate that the sulfur treatments could reduce the surface state density of GaAs. This has been confirmed using ab initio calculations: The reduction of the suface state density is brought about by a mono-atomic layer of sulfur atoms which terminate the surface dangling bonds of G a and As which act as surface ,(')