Passivation of GaAs surface by atomic-la
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M. Bosund; A. Aierken; J. Tiilikainen; T. Hakkarainen; H. Lipsanen
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Article
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2008
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Elsevier Science
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English
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Photoluminescence (PL) intensity and carrier lifetime of TiN coated InGaAs/GaAs NSQW structures are used to indicate the passivation efficiency. Passivation film properties like thickness, mass density and interface roughness are studied by X-ray reflectivity measurements. It is shown that TiN not o