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GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

โœ Scribed by M. Bosund; P. Mattila; A. Aierken; T. Hakkarainen; H. Koskenvaara; M. Sopanen; V.-M. Airaksinen; H. Lipsanen


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
239 KB
Volume
256
Category
Article
ISSN
0169-4332

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Passivation of GaAs surface by atomic-la
โœ M. Bosund; A. Aierken; J. Tiilikainen; T. Hakkarainen; H. Lipsanen ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 793 KB

Photoluminescence (PL) intensity and carrier lifetime of TiN coated InGaAs/GaAs NSQW structures are used to indicate the passivation efficiency. Passivation film properties like thickness, mass density and interface roughness are studied by X-ray reflectivity measurements. It is shown that TiN not o