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Improvement of electrical properties of GaAs on silicon by hydrogenation using plasma-enhanced chemical vapour deposition of hydrogenated silicon nitride

โœ Scribed by G. Zou; M.X. Li; M. de Potter; M. Van Rossum; J. De Boeck; G. Borghs

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
323 KB
Volume
9
Category
Article
ISSN
0921-5107

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๐Ÿ“œ SIMILAR VOLUMES

Preparation of hydrogenated amorphous si
Preparation of hydrogenated amorphous silicon carbide thin films by plasma enhanced chemical vapour deposition
โœ J Huran; J ล afrรกnkovรก; A.P. Kobzev ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 252 KB

Thin silicon carbide (SiCI films were prepared by plasma enhanced chemical vapour deposition PECVDI. The structural properties of Sic films were investigated by IR, RBS, and ERD measurement techniques. The results showed that the films contain the typical features found in hydrogenated amorphous Sic