This study reports for the first time, the evaluation of the work function and thermal stability of TiN gate material for deep sub-micron CMOS, elaborated by using metal organic atomic layer deposition, from TDMAT and NH 3 precursors. Composition, microstructure and electrical properties of atomic l
Atomic layer deposition of titanium nitride from TDMAT precursor
โ Scribed by J. Musschoot; Q. Xie; D. Deduytsche; S. Van den Berghe; R.L. Van Meirhaeghe; C. Detavernier
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 434 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0167-9317
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