Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process

✍ Scribed by Jaan Aarik; Aleks Aidla; Teet Uustare; Mikko Ritala; Markku Leskelä

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 208 KB
• Volume: 161
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00274-9

✦ Synopsis

Atomic layer deposition ALD of titanium oxide from titanium isopropoxide Ti OCH CH and water as well as 3 2 4 Ž Ž . . Ž . from Ti OCH CH and hydrogen peroxide H O was studied. According to data of real-time quartz crystal 3 2 4 2 2 Ž . Ž Ž . . microbalance QCM measurements, adsorption of Ti OCH CH was a self-limited process at substrate temperatures 3 2 4 100-2508C. At 200-2508C, the growth rate was independent of whether water or H O was used as the oxygen precursor. 2 2

Insufficient reactivity of water vapor hindered the film growth at temperatures 100-1508C. Incomplete removal of the precursor ligands from solid surface by water pulse was revealed as the main reason for limited deposition rate. The growth rate increased significantly and reached 0.12 nm per cycle at 1008C when water was replaced with H O . The carbon 2 2 contamination did not exceed 1 at.% and the refractive index was 2.3 in the films grown at temperatures as low as 1008C.