Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide
✍ Scribed by Ryan C. Smith; Tiezhong Ma; Noel Hoilien; Lancy Y. Tsung; Malcolm J. Bevan; Luigi Colombo; Jeffrey Roberts; Stephen A. Campbell; Wayne L. Gladfelter
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 340 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1616-301X
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✦ Synopsis
A brief survey of the precursors used for the chemical vapour deposition of the dioxides of titanium, zirconium and hafnium is presented. The review covers precursors used for the closely related process known as atomic layer chemical vapour deposition (ALCVD or ALD). Precursors delivered by standard carrier gas transport and by direct liquid injection (DLI) methods are included. The complexes fall into four classes based upon the ligands: halides, alkoxides, acetylacetonates (acac) and nitrates. Compounds bearing a mixture of ligand types have also found application in this area. The impact of the ligand on the microstructure of the metal oxide ®lm is greatest at lower temperatures where the deposition rate is limited by the surface reactivity. The ®rst use of anhydrous hafnium nitrate, Hf(NO 3 ) 4 , to deposit ®lms of hafnium oxide on silicon is reported. The ®lms are characterized by Rutherford backscattering and X-ray photoelectron spectroscopy, X-ray diffraction and transmission electron microscopy.