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Low-temperature deposition of titanium nitride films from dialkylhydrazine-based precursors

✍ Scribed by Joseph T. Scheper; Peggy J. McKarns; T.Suren Lewkebandara; Charles H. Winter

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
171 KB
Volume
2
Category
Article
ISSN
1369-8001

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Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200Β±425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed