Surface passivation of GaAs by ultra-thin cubic GaN layer

✍ Scribed by Sanguan Anantathanasarn; Shin-ya Ootomo; Tamotsu Hashizume; Hideki Hasegawa

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 288 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00077-5

✦ Synopsis

Attempts were made to passivate the GaAs 001 surface by a pseudomorphic ultra-thin cubic GaN layer formed by a Ž . Ž . nitrogen radical N-radical or nitrogen plasma irradiation technique. Reflection high-energy electron diffraction RHEED Ž . pattern observations and detailed X-ray photoelectron spectroscopy XPS analysis have shown that ultra-thin cubic GaN Ž . layer on GaAs 001 surface with desirable surface stoichiometry can be realized with the optimization of surface nitridation Ž . process parameters. The passivation effects, characterized by ultra-high vacuum photoluminescence UHV PL analysis, revealed strong enhancement in band-edge PL intensity of GaAs after passivation as large as a factor of 10 when compared Ž . with the as-grown clean molecular beam epitaxy MBE GaAs surface.