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Passivation of Si and a-Si:H surfaces by thin oxide and oxy-nitride layers

✍ Scribed by E. Pinčík; H. Kobayashi; J. Rusnák; M. Takahashi; R. Brunner; M. Jergel; A. Morales-Acevedo; L. Ortega; J. Kákoš

No coin nor oath required. For personal study only.

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