The influence of parameters of germanium deposition on wetting layer thickness was studied during the growth on the Si(1 0 0) surface. A non-monotone dependence of the thickness on growth temperature was discovered and accounted for by changing the mechanism of the layer-by-layer growth. The conclus
✦ LIBER ✦
Optical and structural study of Ge/Si quantum dots on Si(1 0 0) surface covered with a thin silicon oxide layer
✍ Scribed by A. Fonseca; E. Alves; J.P. Leitão; N.A. Sobolev; M.C. Carmo; A.I. Nikiforov
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 178 KB
- Volume
- 124-125
- Category
- Article
- ISSN
- 0921-5107
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