✦ LIBER ✦

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

✍ Scribed by O.A. Shegai; V.I. Mashanov; A.I. Nikiforov; V.V. Ulyanov; O.P. Pchelyakov

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 214 KB
Volume: 42
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2010.02.026

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain relaxation of epitaxial CoSi2 and

Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(0 0 1) and epi-CoSi2/Si0.83Ge0.17/Si(0 0 1) structures

✍ D.O. Shin; M.R. Sardela Jr.; S.H. Ban; N.-E. Lee; K.-H. Shim 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 324 KB

Interband photoconductivity of Ge/Si str

Interband photoconductivity of Ge/Si structures with self-organized quantum rings

✍ O.A. Shegai; V.I. Mashanov; H.-H. Cheng; O.P. Pchelyakov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 252 KB

Optical and structural study of Ge/Si qu

Optical and structural study of Ge/Si quantum dots on Si(1 0 0) surface covered with a thin silicon oxide layer

✍ A. Fonseca; E. Alves; J.P. Leitão; N.A. Sobolev; M.C. Carmo; A.I. Nikiforov 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 178 KB

Structure of the Si(111)-2×1 surface wit

Structure of the Si(111)-2×1 surface with 13ML Ge coverage

✍ S.B. Zhang; Marvin L. Cohen; John E. Northrup 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 203 KB

Epitaxial growth and thermal stability o

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(0 0 1) substrates

✍ Shaojian Su; Wei Wang; Buwen Cheng; Guangze Zhang; Weixuan Hu; Chunlai Xue; Yuhu 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 736 KB

Single-crystal Ge 1 À x Sn x alloys (x ¼ 0.025, 0.052, and 0.078) with diamond cubic structure have been grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE), using high-quality Ge thin films as buffer layers. The Ge 1 À x Sn x alloys are nearly fully strained and have high crystalline qual

Solid phase epitaxy of Ge films on CaF2/

Solid phase epitaxy of Ge films on CaF2/Si(1 1 1)

✍ E.P. Rugeramigabo; C. Deiter; J. Wollschläger 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 469 KB

At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 8C. Ge films break

Photoconductivity of Si/Ge/Si structures with 1.5 and 2&#xa0;ML of Ge layer

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer